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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1934-1936

Improvement of AlGaInP multiple-quantum-well light-emitting diodes by modification of ohmic contact layer

(6) Wang, Hsin Chuan a Su, Yan Kuin a Lin, Chun Liang a Chen, Wen Ben a Chen, Shi Ming b Li, Wen Liang b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b Epitech Technology Corporation (Taiwan)

Author keywords

AIGalnP; Current spreading; Light emitting diodes; Meshed contact layer; Reliability

Indexed keywords

CARBON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ALGAINP; CIRCULAR ELECTRODES; CURRENT-SPREADING; MESHED CONTACT LAYERS;

LIGHT EMITTING DIODES;

EID: 3142601167 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.1934 Document Type: Conference Paper

Times cited : (10)

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