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Volumn 67, Issue 7, 2001, Pages 1169-1174

A study on electrochemical machining method in ultrapure water - Etching process of hydrogen-terminated Si(001) surface atom by hydroxyl function

Author keywords

Back bond; Density functional theory; Etching; First principles molecular dynamics simulation; Hydrogen terminated silicon (001) surface; Hydroxyl radical; Orbital hybridization; Plane wave basis set; Pseudopotential; Surface step

Indexed keywords


EID: 31344446267     PISSN: 09120289     EISSN: None     Source Type: Journal    
DOI: 10.2493/jjspe.67.1169     Document Type: Article
Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.