High Q (33 000) all-epitaxial microcavity for quantum dot vertical-cavity surface-emitting lasers and quantum light sources

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Muller, Andreas ^a   Shih, Chih Kang ^a   Ahn, Jaemin ^b   Lu, Dingyuan ^b   Gazula, Deepa ^b   Deppe, Dennis G ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALL-EPITAXIAL MICROCAVITY LIGHT SOURCE; INTRACAVITY MESA; QUANTUM DOT ACTIVE REGION; VERTICAL-CAVITY SURFACE-EMITTING LASERS;

EPITAXIAL GROWTH; ETCHING; GROUND STATE; LIGHT SOURCES; LITHOGRAPHY; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM OPTICS;

EID: 31144472694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158519     Document Type: Article

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