Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 2194-2197

  Shamiryan, Denis ^a   Paraschiv, Vasile ^a   Locorotondo, Sabrina ^a   Beckx, Stephan ^a   Boullart, Werner ^a   Vanhaelemeersch, Serge ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ION BEAMS; SILICON COMPOUNDS;

CHARGE ACCUMULATION; DISTORTION; ION ENERGY;

OXIDES;

EID: 31144469343     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2019386     Document Type: Conference Paper

References (14)

1. H. Akatsu, D. E. Kotecki, J. J. Lian, and H. Shen, U.S. Patent No. 6 379 5777 (2002).
2. S. A. Vitale and B. A. Smith, J. Vac. Sci. Technol. B 21, 2205 (2003).
3. M. A. Vyvoda, M. Li, and D. B. Graves, J. Vac. Sci. Technol. A 17, 3293 (1999).
4. Wedong Jin and Herbert H. Sawin, J. Vac. Sci. Technol. A 21, 911 (2003).
5. J. C. Arnold and H. H. Sawin, J. Appl. Phys. 70, 5314 (1991).
6. Gyeong S. Hwang and Kostantinos P. Giapis, J. Appl. Phys. 81, 3433 (1997).
7. Jane P. Chang and Herbert H. Sawin, J. Vac. Sci. Technol. B 19, 1870 (2001).
8. J. M. Lane, F. P. Klemens, K. H. A. Bogart, M. V. Malyshev, and J. T. C. Lee, J. Vac. Sci. Technol. A 18, 188 (2000).
9. A. C. Westerheim, A. H. Labun, J. H. Dubash, J. C. Arnold, H. H. Sawin, and V. Yu. Wang, J. Vac. Sci. Technol. A 13, 853 (1995).
10. Marc Schaepkens and Gottlieb S. Oehrlein, Appl. Phys. Lett. 72, 1293 (1998).
11. K. H. A. Bogart, F. P. Klemens, M. V. Malyshev, J. I. Colonell, V. M. Donnelly, J T. C. Lee, and J. M. Lane, J. Vac. Sci. Technol. A 18, 197 (2000).
12. Che-Heung Kim and Yong-Kweon Kim, J. Micromech. Microeng. 15, 358 (2005).
13. Qiuxia Xu, Qian He, Mong Liu, Yuying Zhao, Baoqing Chen, Zhengsheng Han, Tianchun Ye, and Dexin Wu, J. Vac. Sci. Technol. B 21, 2352 (2003).
14. K. P. Giapis, G. S. Hwang, and O. Joubert, Microelectron. Eng. 61-62, 835 (2002).