Gas-assisted focused ion beam etching characteristics of niobium

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 585-587

  Fu, X L ^a   Li, P G ^a   Jin, A Z ^a   Zhang, H Y ^a,b   Yang, H F ^a   Tang, W H ^a  

^a INSTITUTE OF PHYSICS   (China)

^b BEIJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ETCHING; GASES; ION BEAMS;

ETCHING PARAMETERS; GAS ASSISTED ETCHING; GAS SPECIES;

NIOBIUM;

EID: 31144453001     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1884121     Document Type: Conference Paper

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