Characterization of nitrogen distribution in HfO2 with low energy secondary ion mass spectrometry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 4, 2005, Pages 589-592

  Jiang, Z X ^a   Kim, K ^a   Lerma, J ^a   Sieloff, D ^a   Luo, T Y ^a   Yang, J Y ^b   Triyoso, D ^a   Tseng, H ^a   Tobin, P ^a   Ramani, N ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW ENERGY SECONDARY ION MASS SPECTROMETRY (LESIMS); MODIFIED MAGNETIC TYPE (MMT); NITRIDATION;

ANNEALING; NITRIDING; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY;

NITROGEN;

EID: 31044437038     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1914811     Document Type: Article

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