Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean-room production environments

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 4, 2005, Pages 639-651

  Hellin, David ^a,b,c   De Gendt, Stefan ^a,b,c   Rip, Jens ^a,d   Vinckier, Chris ^b,e,f,g  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c CMOS Device Research Group   (Belgium)

^d Ultra Clean Processing Group

^e Laboratory for Physical and Analytical Chemistry   (Belgium)

^f AMERICAN CHEMICAL SOCIETY   (United States)

^g International Geosphere and Biosphere Programme (IGBP)   (Belgium)

Author keywords

Analysis; Contamination control; Gate dielectrics; Germanium; High ; Interconnects; Metal gate; Metrology; TXRF; VPD DC

Indexed keywords

DIELECTRIC CONTAMINANTS; LOW-ENERGY EXCITATION; X-RAY FLUORESCENCE SPECTROMETRY;

FLUORESCENCE; GERMANIUM; X RAYS;

SILICON;

EID: 31044435012     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2005.861351     Document Type: Review

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