-
1
-
-
10444270913
-
A 132 Gb/s 4:1 multiplexer in 0.13-μm SiGe bipolar technology
-
December
-
M. Meghelli, "A 132 Gb/s 4:1 Multiplexer in 0.13-μm SiGe Bipolar Technology," IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2403-2407, December 2004.
-
(2004)
IEEE J. Solid-state Circuits
, vol.39
, Issue.12
, pp. 2403-2407
-
-
Meghelli, M.1
-
2
-
-
10444272337
-
120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs
-
December
-
Y. Suzuki, et al, "120-Gb/s Multiplexing and 110-Gb/s Demultiplexing ICs," IEEE J. Solid-State Circuits, vol. 39. no. 12, pp. 2397-2402, December 2004.
-
(2004)
IEEE J. Solid-state Circuits
, vol.39
, Issue.12
, pp. 2397-2402
-
-
Suzuki, Y.1
-
3
-
-
4444311569
-
144-Gb/s selector and 100-Gb/s 4:1 multiplexer using InP HEMTs
-
June
-
T. Suzuki, et al, "144-Gb/s Selector and 100-Gb/s 4:1 Multiplexer Using InP HEMTs," 2004 IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 117-120, June 2004.
-
(2004)
2004 IEEE MTT-S Int. Microwave Symp. Dig.
, vol.1
, pp. 117-120
-
-
Suzuki, T.1
-
4
-
-
0032480181
-
SiGe retiming power MUX for directly driving an EAM up to 50 Gb/s
-
September
-
M. Möller et al, "SiGe retiming power MUX for directly driving an EAM up to 50 Gb/s," IEE Electronics Letters, vol. 34, no. 18, pp. 1782-1784, September 1998.
-
(1998)
IEE Electronics Letters
, vol.34
, Issue.18
, pp. 1782-1784
-
-
Möller, M.1
-
5
-
-
0037019221
-
Mux-driver-EAM in single module - A solution for ultra-high bit rate applications
-
July
-
J.-R. Burie et al, "Mux-driver-EAM in single module - a solution for ultra-high bit rate applications," IEE Electronics Letters, vol. 38, no. 14, pp. 740-741, July 2002.
-
(2002)
IEE Electronics Letters
, vol.38
, Issue.14
, pp. 740-741
-
-
Burie, J.-R.1
-
6
-
-
17044379883
-
A 40 Gbps broadband amplifier for modulator-driver application using a GaAs HBT technology
-
Sept.
-
Ch. Meliani, et al, "A 40 Gbps Broadband Amplifier for Modulator-Driver Application Using a GaAs HBT Technology," 2004 IEEE BCTM Proc., pp 281-284, Sept. 2004.
-
(2004)
2004 IEEE BCTM Proc.
, pp. 281-284
-
-
Meliani, Ch.1
-
7
-
-
4444303479
-
DFF-drivers ICs for 40 Gb/s ETDM in InP DHBT technology
-
June
-
A. Konczykowska et al, "DFF-Drivers ICs for 40 Gb/s ETDM in InP DHBT Technology," 2004 IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 113-117, June 2004.
-
(2004)
2004 IEEE MTT-S Int. Microwave Symp. Dig.
, vol.1
, pp. 113-117
-
-
Konczykowska, A.1
-
8
-
-
0036712192
-
T SiGe technology
-
September
-
T SiGe technology," IEEE J. Solid-State Circuits, vol. 37, no. 9, pp. 2403-2407, September 2002.
-
(2002)
IEEE J. Solid-state Circuits
, vol.37
, Issue.9
, pp. 2403-2407
-
-
Freeman, G.1
-
9
-
-
27644565078
-
High voltage swing and high data rate multiplexers in SiGe technology
-
June
-
M. Wurzer et al, "High Voltage Swing and High Data Rate Multiplexers in SiGe Technology, "2005 IEEE RFIC Symp. Dig., pp. 321-324, June 2005.
-
(2005)
2005 IEEE RFIC Symp. Dig.
, pp. 321-324
-
-
Wurzer, M.1
-
10
-
-
1042289143
-
SiGe bipolar technology with 3.9 ps gate delay
-
September
-
T.-F. Meister et al, "SiGe Bipolar Technology with 3.9 ps Gate Delay," 2005 IEEE BCTM Proc., pp 103-106, September 2003.
-
(2003)
2005 IEEE BCTM Proc.
, pp. 103-106
-
-
Meister, T.-F.1
-
11
-
-
0030213937
-
Design considerations for very-high speed Si-bipolar IC's operating up to 50 Gb/s
-
August
-
H.-M. Rein et al, "Design Considerations for Very-High Speed Si-Bipolar IC's operating up to 50 Gb/s," IEEE J. Solid-State Circuits, vol. 31, no. 8, pp. 1076-1190, August 1996.
-
(1996)
IEEE J. Solid-state Circuits
, vol.31
, Issue.8
, pp. 1076-1190
-
-
Rein, H.-M.1
-
12
-
-
0032651135
-
SiGe driver circuit with high output amplitude operating up to 23 Gb/s
-
June
-
R. Schmid and H.-M. Rein, "SiGe Driver Circuit with High Output Amplitude Operating up to 23 Gb/s," IEEE J. Solid-State Circuits, vol. 34, no. 6, pp. 886-891, June 1999.
-
(1999)
IEEE J. Solid-state Circuits
, vol.34
, Issue.6
, pp. 886-891
-
-
Schmid, R.1
Rein, H.-M.2
-
13
-
-
0001319148
-
The design of wide-band transistor feedback amplifier
-
February
-
E. M. Cherry and D. E. Hooper, "The design of wide-band transistor feedback amplifier, " Inst. Elec. Eng. Proc., vol. 110, no. 2, pp. 375-389, February 1963.
-
(1963)
Inst. Elec. Eng. Proc.
, vol.110
, Issue.2
, pp. 375-389
-
-
Cherry, E.M.1
Hooper, D.E.2
-
14
-
-
21644458454
-
11-1 PRBS generators in SiGe bipolar technology
-
October
-
11-1 PRBS Generators in SiGe Bipolar Technology," 2004 IEEE CSIC Symp. Dig., pp. 219-222, October 2004.
-
(2004)
2004 IEEE CSIC Symp. Dig.
, pp. 219-222
-
-
Knapp, H.1
|