Mechanism for Cu void defect on various electroplated film conditions

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 56-59

  Feng, H P ^a   Cheng, M Y ^b   Wang, Y L ^c   Chang, S C ^c   Wang, Y Y ^a   Wan, C C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Copper plating; Copper void; Direct current plating; Electromigration resistance

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTROLYTES;

COPPER VOID; DIRECT CURRENT PLATING; ELECTROMIGRATION RESISTANCE;

ELECTROPLATED PRODUCTS;

EID: 30944463813     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.062     Document Type: Conference Paper

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