Efficiency increase of silicon-on-insulator Raman lasers by reduction of free-carrier absorption in tapered waveguides

2005 Conference on Lasers and Electro-Optics, CLEO

Volumn 2, Issue , 2005, Pages 1548-1550

  Krause, Michael ^a   Renner, Hagen ^a   Brinkmeyer, Ernst ^a  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; RAMAN SCATTERING; WAVEGUIDES;

FREE-CARRIER ABSORPTION; RAMAN LASERS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 30944446677     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.2005.202188     Document Type: Conference Paper

References (3)

1. G. T. Reed, "The optical age of silicon." Nature 427, 595-596 (2004).
2. O. Boyraz and B. Jalali, "Demonstration of a silicon Raman laser," Opt. Express 12(21), 5269-5273 (2004).
3. M. Krause, H. Renner, and E. Brinkmeyer. "Analysis of Raman lasing characteristics in silicon-on-insulator waveguides," Opt. Express 12(23), 5703-5710(2004).