Suppression of nucleation during the aluminum-induced layer exchange process

Materials Research Society Symposium Proceedings

Volumn 862, Issue , 2005, Pages 239-244

  Schneider, Jens ^a   Klein, Juliane ^a   Sarikov, Andrey ^a,b   Muske, Martin ^a   Gall, Stefan ^a   Fuhs, Walther ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; ELECTRONIC EQUIPMENT; GLASS; GRAIN BOUNDARIES; POLYSILICON;

CONCURRENT CRYSTALLIZATION; GLASS SUBSTRATES; NUCLEATION SUPPRESSION;

NUCLEATION;

EID: 30644459758     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-862-a2.2     Document Type: Conference Paper

References (7)

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2. J. Schneider, J. Klein, M. Muske, A. Schöpke, S. Gall, and W. Fuhs, "Aluminium-induced crystallisation of amorphous silicon: Influence of oxidation conditions", Proc. of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, (2003), 106.
3. O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and S. R. Wenham, "Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature", Appl. Phys. Lett. 73, (1998), 3214.
4. O. Nast and A. J. Hartmann, "Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon", J. Appl. Phys. 88, (2000), 716.
5. S. Gall, M. Muske, I. Sieber, O. Nast, and W. Fuhs, "Aluminum-induced crystallization of amorphous silicon", J. Non-Cryst. Solids 299-302, (2002), 741.
6. O. Nast and S. R. Wenham, "Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization", J. Appl. Phys. 88, (2000), 124.
7. C. Spinella, S. Lombardo, and F. Priolo, "Crystal grain nucleation in amorphous silicon", J. Appl. Phys. 84, (1998), 5383.