Luminescence and lifetime properties of europium doped gallium nitride compatible with CMOS technology

Materials Research Society Symposium Proceedings

Volumn 866, Issue , 2005, Pages 53-57

  Poitras, Carl B ^a   Lipson, Michal ^a   Wu, Huaqiang ^a   Spencer, Michael G ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); EUROPIUM; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; WETTING;

LIFETIME PROPERTIES; WETTING AGENTS;

GALLIUM NITRIDE;

EID: 30544448291     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-866-v3.2     Document Type: Conference Paper

References (10)

1. H. Ennen, J. Schneider, G. Pomrenke and A Axmann, Appl. Phys. Lett., 43, 10 (1983).
2. A. J. Steckl and J. M. Zavada, MRS Bull., 24, 9 (1999)
3. A. J. Steckl, J. Heikenfeld, M. Garter, R. Birkhahn and D. S. Lee, Compound Semicond., 6, 48 (2000).
4. A. Yoshida, Y. Nakanishi and A. Wakahara, Proc. Of the SPIE, 5062, 1 (2003).
5. J. M. Zavada, M. Thaik, U. Hömmerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton and R. G. Wilson, Inl. Of Alloys and Compounds, 300-301 (2000).
6. C.-W. Lee, H. O. Everitt, D. S. Lee, A. Steckl and J. M. Zavada, Inl. Appl. Phys., 95, 12 (2004).
7. H. J. Lozykowski, W. M. Jadwisienczak and I. Brown, Appl. Phys. Lett., 74, 8 (1999).
8. D. M. Hansen, R. Zhang, N. R. Perkins, S. Safvi, L. Zhang, K. L. Bray and T. F. Kuech, Appl. Phys. Lett., 72, 10 (1998).
9. H. Wu, C. B. Poitras, M. Lipson and M. G. Spencer, Appl. Phys. Lett., 86, 18 (2005) (in press).
10. H. Wu, A. Bourlinos, E. P. Giannelis and M. G. Spencer in GaN, AlN, InN, and Their Alloys, (Mater. Res. Soc. Symp. Proc. 831, Boston, MA, 2004).