Effect of intrinsic defects on hopping conduction in n- and p-type CuInSe2 crystals

Inorganic Materials

Volumn 33, Issue 4, 1997, Pages 342-345

  Abdullaev, M A ^a   Gadzhieva, R M ^a   Magomedova, D Kh ^a   Khokhlachev, P P ^a  

^a INSTITUTE OF PHYSICS   (Russian Federation)

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EID: 3042937210     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. 2 Systems), Moscow: Metallurgiya, 1993.
2. 2 Films, Indian J. Pure Appl. Phys., 1990, vol. 28, no. 4, pp. 183-186.
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4. 2 Crystals, Neorg. Mater., 1993, vol. 29, no. 6, pp. 785-788.
5. Anatychuk, L.I., Termoelementy i termoelektricheskie ustroistva: Spravochnik (Thermoelements and Thermoelectric Devices: A Handbook), Kiev: Naukova Dumka, 1979.
6. 2 Compounds, J. Appl. Phys., 1990, vol. 68, no. 5, pp. 2206-2210.
7. 2 Chalcopyrite Semiconductors, Mater. Sci. Eng., B, 1992, vol. 12, no. 3, pp. 261-267.
8. Mott, N. and Davis, E., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1979. Translated under the title Elektronnye protsessy v nekristallicheskikh veshchestvakh, Moscow: Mir, 1982.
9. Mott, N. and Davis, E., Electronic Processes in Non-Crystalline Materials, Oxford: Clarendon, 1979. Translated under the title Elektronnye protsessy v nekristallicheskikh veshchestvakh, Moscow: Mir, 1982.
10. Shklovskii, B.I. and Efros, A.L., Elektronnye svoistva legirovannykh poluprovodnikov (Electronic Properties of Doped Semiconductors), Moscow: Nauka, 1979.