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Volumn 53, Issue 4, 1996, Pages 1886-1890

Photoconductive analysis of defect density of hydrogenated amorphous silicon during room-temperature plasma posthydrogenation, light soaking, and thermal annealing

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Indexed keywords


EID: 3042922118     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.1886     Document Type: Article
Times cited : (3)

References (30)
  • 5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.