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Volumn 53, Issue 4, 1996, Pages 1886-1890
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Photoconductive analysis of defect density of hydrogenated amorphous silicon during room-temperature plasma posthydrogenation, light soaking, and thermal annealing
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 3042922118
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.53.1886 Document Type: Article |
Times cited : (3)
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References (30)
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