Schottky barrier diodes from diamond grown by microwave plasma assisted chemical vapor deposition (MPCVD)

New Diamond and Frontier Carbon Technology

Volumn 8, Issue 4, 1998, Pages 261-270

  Pereira, Luiz ^a   Gomes, Henrique L ^b   Rodrigues, Ana ^b   Pereira, Estela ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF ALGARVE   (Portugal)

Author keywords

Defects; Diamond devices; Electrical properties

Indexed keywords

EID: 3042909712     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

1. D. G. Jeng, H. S. Tuan, R. F. Salat and G. J. Fricano: J. Appl. Phys. 68 (1990) 5902.
2. A. Göhl, T. Habermann, G. Müller, D. Nau, M. Wedel, M. Christ, M. Schreck and B. Stritzker: Diamond Relat. Mater. (in press).
3. P. Gonon, A. Deneuville, F. Fontaine and E. Gheeraert: J. Appl. Phys. 78 (1995) 6633.
4. D. M. Malta, J. A. von Windheim, H. A. Wynands and B. Fox: J. Appl. Phys. 77 (1995) 1536.
5. H. A. Bethe: M. I. T. Radiation Lab. Rep. 43 (1942).
6. A. Vescan, W. Ebert, T. Borst and E. Kohn: Diamond Relat. Mater. 4 (1995) 661.
7. H. Gomes: Ph.D. Thesis, Bangor, UK (1993).
8. K. S. Cole and R. H. Cole: J. Chem. Phys. 9 (1941) 341.