Investigations into the source of 1/f noise in HgxCd 1-xTe diodes

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 757-760

  Ashby, M K ^a   Gordon, N T ^a   Elliott, C T ^a   Jones, C L ^b   Maxey, C D ^b   Hipwood, L ^b   Catchpole, R ^b  

^a QINETIQ   (United Kingdom)

^b BAE ^*  (United Kingdom)

Author keywords

1 f noise; HgxCd1 xTe; Infrared (IR) detector; Light emitting diode (LED); Photovoltaic detector

Indexed keywords

CARRIER CONCENTRATION; COOLING SYSTEMS; ELECTRIC FIELDS; INFRARED RADIATION; MERCURY COMPOUNDS; PHOTONS; RADIATION DETECTORS; SEMICONDUCTOR MATERIALS; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; TEMPERATURE INDICATING CAMERAS;

I/F NOISE; NOISE COUPLING; PHOTOVOLTAIC DETECTORS; THERMAL CAMERAS;

LIGHT EMITTING DIODES;

EID: 3042828627     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0078-x     Document Type: Conference Paper

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