High aspect ratio nanovolume glass cell array fabricated by area-selective silicon electrochemical etching process

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2004, Pages 705-708

  Homma, Takayuki ^a   Sato, Hirotaka ^a   Mori, Kentaro ^a   Osaka, Tetsuya ^a   Shoji, Shuichi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GLASS; MICROPOROSITY; NANOTECHNOLOGY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

GLASS CELL ARRAY; HIGH ASPECT RATIO (HAR); NANOSCALE SYSTEMS; SELECTIVE ANODIZATION PROCESS;

ELECTROCHEMISTRY;

EID: 3042822168     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. D. R. Turner, "Electropolishing silicon in hydrofluoric acid solutions", J. Electrochem. Soc., vol. 105, pp. 402-408, 1958.
3. V. Lehmann and H. Foll, "Formation mechanism and properties of electrochemically etched trenches in n-type silicon", J. Electrochem. Soc. vol. 137, pp. 653-659, 1990.
4. V. Lehmann, "The physics of macropore formation in low doped n-type silicon", J. Electrochem. Soc. vol. 140, pp. 2836-2843, 1993.