Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications

IEEE Transactions on Nanotechnology

Volumn 2, Issue 4, 2003, Pages 205-209

  Jang, Moongyu ^a   Lee, Seongjae ^a   Park, Kyoungwan ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Seoul   (South Korea)

Author keywords

Drain induced Schottky barrier thinning; Erbium silicide; Modeling; Schottky barrier tunnel transistors

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; ERBIUM; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES;

DRAIN CURRENTS; DRAIN VOLTAGE; THERMIONIC CURRENT;

TRANSISTORS;

EID: 3042762732     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820801     Document Type: Conference Paper

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