Spin injection in the nonlinear regime: Band bending effects

Physical Review Letters

Volumn 92, Issue 22, 2004, Pages

  Schmidt, G ^a   Gould, C ^a   Grabs, P ^a   Lunde, A M ^a,b   Richter, G ^a   Slobodskyy, A ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; FERMI LEVEL; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PARAMAGNETIC MATERIALS; SEMICONDUCTOR DOPING;

DILUTE II-VI MAGNETIC SEMICONDUCTORS (DMS); ELECTRICAL SPIN INJECTION; NONMAGNETIC SEMICONDUCTORS (NMS); ZEEMAN EFFECTS;

MAGNETIC SEMICONDUCTORS;

EID: 3042718910     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.226602     Document Type: Article

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