Possible mechanism for tunneling magnetoresistance in La 0.9Ba0.1MnO3/Nb-doped SrTiO3 p +-n junctions

Solid State Communications

Volumn 131, Issue 6, 2004, Pages 383-387

  Yuan, G L ^a,b   Liu, J M ^a   Baba Kishi, K ^b   Chan, H L W ^b   Choy, C L ^b   Liu, Z G ^a  

^a NANJING UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

A. Magnetically ordered materials; D. Spin dynamics; D. Tunnelling

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; PERMITTIVITY; RELAXATION PROCESSES; SEMICONDUCTOR DOPING; STRONTIUM COMPOUNDS;

MAGNETICALLY ORDERED MATERIALS; SPIN DYNAMICS; TUNNELING CURRENTS; TUNNELING MAGNETORESISTANCE (TMR);

SEMICONDUCTOR JUNCTIONS;

EID: 3042713288     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.05.040     Document Type: Article

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