Construction of mini‐ECRIS for the JAERI 400 kV ion implanter

Review of Scientific Instruments

Volumn 67, Issue 3, 1996, Pages 1174-1176

  Saitoh, Y ^a   Yokota, W ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

ARGON IONS; COMPUTERIZED SIMULATION; ELECTRON CYCLOTRON RESONANCE; ION IMPLANTATION; ION SOURCES; MAGNETIC FIELD CONFIGURATIONS; MEV RANGE 01 10; MICRO AMP BEAM CURRENTS; MULTICHARGED IONS

Indexed keywords

EID: 3042683402     PISSN: 00346748     EISSN: 10897623     Source Type: Journal    
DOI: 10.1063/1.1146723     Document Type: Conference Paper

References (5)

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4. G. Melin et al., Rev. Sci. Instrum. 65, 1051 (1994).RSINAK
5. P. Sortais, P. Attal, L. Bex, M. P. Bourgion, P. LeHerissier, and J. Y. Pacquet, “GANIL ECRIS Status and Development,” Proc. Int. Conf. on the Physics of Multiply Charged Ions and Int. Workshop on ECR Ion Source, J. Phys. 855 (1989).