Statistical analysis of nanocrystal memory reliability

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 509-514

  Compagnoni, C Monzio ^a   Ielmini, D ^a   Spinelli, A S ^b   Lacaita, A L ^a,c   Gerardi, C ^d   Lombardo, S ^e  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c IFN CNR   (Italy)

^d STMICROELECTRONICS   (Italy)

^e CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; RELIABILITY; SILICON; STATISTICAL METHODS; STRESSES; THRESHOLD VOLTAGE;

CELL ARRAY STRESS TEST (CAST); NANOCRYSTAL (NC) MEMORY; STRESS-INDUCED LEAKAGE CURRENTS (SILC);

NANOSTRUCTURED MATERIALS;

EID: 3042561380     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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