Direct determination of interface and bulk traps in stacked HfO 2 dielectrics using charge pumping method

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 581-582

  Hou, T H ^a   Wang, M F ^a   Mai, K L ^a   Lin, Y M ^a   Yang, M H ^a   Yao, L G ^a   Jin, Y ^a   Chen, S C ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE-PUMPING (CP) TECHNIQUES; PROCESS OPTIMIZATION;

ELECTRIC CHARGE; ELECTRON TRAPS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); OPTIMIZATION; SILICA; THRESHOLD VOLTAGE;

DIELECTRIC MATERIALS;

EID: 3042559572     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. 2 Dual Layer Gate Dielectrics", IEEE Electron Device Lett., vol 24, p. 87, 2003.
2. W. Chen, A. Balasinski, and T. P. Ma, "Lateral Profiling of Oxide Charge and Interface Traps Near MOSFET Junctions", IEEE Trans. Electron Devices, vol. 40, p. 187, 1993.
3. A. Kerber et al., "Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics," Symp. on VLSI Technology, p. 159, Jun. 2003