Carrier separation analysis for clarifying leakage mechanism in unstressed and stressed HfAlOx/SiO2 stack dielectric layers

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 188-193

  Mizubayashi, Wataru ^a   Yasuda, Naoki ^a   Ota, Hiroyuki ^a   Hisamatsu, Hirokazu ^a   Tominaga, Koji ^a   Iwamoto, Kunihiko ^a   Yamamoto, Katsuhiko ^a   Horikawa, Tsuyoshi ^a   Nabatame, Toshihide ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; PERMITTIVITY; POLYSILICON; SILICA;

CARRIER SEPARATION; DIELECTRIC LAYERS; SOFT BREAKDOWN (SBD); STACKED STRUCTURES;

DIELECTRIC MATERIALS;

EID: 3042520519     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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