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Volumn 80, Issue 5, 2006, Pages 475-479
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A phenomenological model of ion-bombardment-induced amorphization and re-crystallization in Si
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Author keywords
Amorphization; i v pairs; Ion bombardment; Ion flux; Re crystallization; Si; Substrate temperature; Theoretical model
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Indexed keywords
AMORPHIZATION;
ANNEALING;
DEFECTS;
ION BOMBARDMENT;
RECRYSTALLIZATION (METALLURGY);
I-V PAIRS;
ION FLUX;
SUBSTRATE TEMPERATURE;
THEORETICAL MODEL;
SILICON;
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EID: 30344485980
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.vacuum.2005.08.020 Document Type: Article |
Times cited : (1)
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References (14)
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