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Volumn 80, Issue 5, 2006, Pages 475-479

A phenomenological model of ion-bombardment-induced amorphization and re-crystallization in Si

Author keywords

Amorphization; i v pairs; Ion bombardment; Ion flux; Re crystallization; Si; Substrate temperature; Theoretical model

Indexed keywords

AMORPHIZATION; ANNEALING; DEFECTS; ION BOMBARDMENT; RECRYSTALLIZATION (METALLURGY);

EID: 30344485980     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.08.020     Document Type: Article
Times cited : (1)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.