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Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 673-678

Epitaxial growth of thick GaAs on orientation-patterned wafers for nonlinear optical applications

(5) Bliss, D F a Lynch, C a Weyburne, D a O'Hearn, K b Bailey, J S b

a AIR FORCE RESEARCH LABORATORY (United States)

b SOLID STATE SCIENTIFIC CORPORATION (United States)

Author keywords

A1. Hydride vapor phase epitaxy; B2. Gallium arsenide

Indexed keywords

GALLIUM ALLOYS; HYDRIDES; NONLINEAR OPTICS; SAMPLING; SEMICONDUCTING GALLIUM ARSENIDE;

HYDRIDE VAPOR PHASE EPITAXY; NONLINEAR OPTICAL APPLICATIONS; PARASITIC DEPOSITION; THICK EPITAXIAL LAYERS;

EPITAXIAL GROWTH;

EID: 30344472987 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.140 Document Type: Conference Paper

Times cited : (48)

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