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Volumn 352, Issue 2, 2006, Pages 193-196
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Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition
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Author keywords
Amorphous semiconductors; Atomic force and scanning tunneling microscopy; III V semiconductors X ray diffraction; Laser deposition; Microcrystallinity; Optical spectroscopy; Raman spectroscopy; Surfaces and interfaces; X ray diffraction
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
GLASS;
PULSED LASER DEPOSITION;
RAMAN SPECTROSCOPY;
TEXTURES;
THIN FILMS;
X RAY DIFFRACTION ANALYSIS;
AMORPHOUS SEMICONDUCTORS;
MICROCRYSTALLINITY;
OPTICAL SPECTROSCOPY;
SCANNING TUNNELING SPECTROSCOPY;
SURFACES AND INTERFACES;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 30344465026
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.10.025 Document Type: Article |
Times cited : (11)
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References (15)
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