Homogenization of the melting depth in SiC on Si structures during flash lamp irradiation

Applied Physics Letters

Volumn 87, Issue 24, 2005, Pages 1-3

  Voelskow, Matthias ^a   Skorupa, Wolfgang ^a   Smith, Mark P ^b   McMahon, Richard A ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LAMPS; SILICON; SURFACE ROUGHNESS;

FLASH LAMP ANNEALING; SIC LAYERS;

SILICON CARBIDE;

EID: 30344435303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2140485     Document Type: Article

References (6)

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3. J. F. Ziegler, J. P. Biersack, U. Littmark, The Stopping and Ranges of Ions in Solids (New York, Pergamon, 1985), Vol. 1.
4. E. A. Brandes and G. B. Brook, Smithells Metals Reference Book, 7th ed. (Butterworth-Heinemann, Oxford, 1998), p. 11.
5. W. Anwand, W. Skorupa, L. Rebohle, T. Trautmann, S. Tamme, and T. Grass, International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor Devices, Krippen, Germany, 2005.
6. D. K. Fork, G. B. Anderson, J. B. Boyce, R. I. Johnson, and P. Mei, Appl. Phys. Lett. 68, 2138 (1996).