Probable optimum hydrogen coverage of chemical vapor deposited diamond (111) surface

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 214, Issue 1-2, 1996, Pages 76-80

  Zhang, Yafei ^a,b   Zhou, Zhonghua ^b   Sun, Jianwei ^b   Chen, Guanghua ^b  

^a CCAST WORLD LABORATORY   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL VAPOR DEPOSITION; DIAMONDS; DIMERS; ETCHING; GROWTH RATE; HYDROGEN; HYDROGEN BONDS; PROBABILITY;

ACTIVE HYDROGENS; CHEMICAL VAPOR DEPOSITED DIAMOND; CHEMICAL VAPOR DEPOSITIONS (CVD); DEPOSITION ATMOSPHERE; DIAMOND SURFACES; EXPERIMENTAL CURVES; OCCURRENCE PROBABILITY; PROBABILITY FUNCTIONS;

DANGLING BONDS;

EID: 30244484851     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/0375-9601(96)00154-5     Document Type: Article

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