Experimental study of electron heating in 0.1μ-n MOSFETs

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1993, Pages 35-36

  Dutoit, M ^a   Mieville J P ^a   Shi, Z M ^a   Revil, N ^b   Cristoloveanu, S ^b  

^a EPFL   (Switzerland)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 30244460213     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1993.760232     Document Type: Conference Paper

References (5)

1. P. F. Bagwell, D.A. Antoniadis, and T. P. Orlando, in VLSI Electronics, Microstructure Science, vol. 18 (Academic Press, New York, 1990), p. 305.
2. G. G. Shahidi, Non-stationary transport effects in deep sub-micron channel Si MOSFET's, Ph. D. Thesis, Massachusetts Institute of Technology (1989).
3. J. P. Mitville, J. Barrier, Z. M. Shi, M. Dutoit, Y. Oppliger, J. M. Moret and A. Perret, Microelectron. Engin. 13, P. 189 (1991).
4. Z. M. Shi, J.-P. Miéville, J. Barrier, and M. Dutoit, IEDM Techn. Digest p. 363, 1991.
5. H. S. Haddara and S. Cristoloveanu, Solid State Electron. 31, p. 1573 (1988).