Extremely narrow spectral widths from resonant cavity light-emitting diodes (RCLEDs) suitable for wavelength-division multiplexing at 1.3 μ m and 1.55 μ m

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 651-654

  Hunt, N E J ^a   Schubert, E F ^a   Logan, R A ^a   Zydzik, G J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; QUANTUM OPTICS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

ACTIVE REGIONS; INGAASP; OPTICAL RESONANCE; RESONANT CAVITY LIGHT EMITTING DIODE; SILVER MIRROR; SPECTRAL POWER DENSITY; SPECTRAL WIDTHS; WAVELENGTH DIVISION MULTIPLEXING APPLICATIONS;

LIGHT EMITTING DIODES;

EID: 30144442593     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307444     Document Type: Conference Paper

References (8)

1. F. De Martini, G. Innocenti, G. R. Jacobovitz, and P. Mataloni, "Anomalous spontaneous emission time in a microscopic optical cavity, " Phys. Rev. Lett. vol. 59, pp. 2955-2958, December 1987.
2. H. Yokoyama, K. Nishi, T. Anan, H. Yamada, S. D. Brorson, and E. P. Ippen, "Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities, " Appl. Phys. Lett., vol. 57, pp. 28142816, December 1990.
3. T. Baba, T. Hamano, F. Koyama, and K. Iga, "Spontaneous emission factor of a microcavity DBR surface-emitting laser, " IEEE J. Quantum Electron., vol. 27, pp. 1347-1358, June 1991.
4. E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, "Resonant cavity light-emitting diode, " Appl. Phys. Lett., vol. 60, pp. 921-923, February 1992.
5. M. Ogura, W. Hsin, M.-C. Wu, S. Wang, J. R. Whinnery, S. C. Wang, and J. J. Yang, "Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure, " Appl. Phys. Lett., vol. 51, pp. 1655-1657, November 1987.
6. T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi, and S. Shibata, "GaAs/GaAlAs surface emitting IR LED with Bragg reflector grown by MOCVD, " J. Crystal Growth, vol. 107, pp. 832835, 1991.
7. D. G. Deppe, J. C. Campbell, R. Kuchibhotla, T. J. Rogers, and B. G. Streetman, "Optically-coupled mirror-quantum well InGaAs-GaAs light emitting diode, " Electron. Lett., vol. 26, pp. 1665-1666, September 1990.
8. K. Ujihara, "Spontaneous emission and the concept of effective area in a very short optical cavity with plane-parallel dielectric mirrors, " Jap. J. Appl. Phys., vol. 30, pp. L901-L903, May 1991.