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Volumn 72, Issue 15, 2005, Pages

Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates

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EID: 29644446121     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.153304     Document Type: Article
Times cited : (26)

References (20)
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    • J. A. Porto and J. Sánchez-Dehesa, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.14352, 51, 14352 (1995).
    • (1995) Phys. Rev. B , vol.51 , pp. 14352
    • Porto, J.A.1    Sánchez-Dehesa, J.2
  • 14
    • 0027702691 scopus 로고
    • JCRGAE 0022-0248 10.1016/0022-0248(93)90008-K
    • N. Grandjean and J. Massies, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(93)90008-K, 134, 51 (1993).
    • (1993) J. Cryst. Growth , vol.134 , pp. 51
    • Grandjean, N.1    Massies, J.2
  • 18
    • 0000420099 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.53.998
    • N. Grandjean, J. Massies, and M. Leroux, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.53.998, 53, 998 (1996).
    • (1996) Phys. Rev. B , vol.53 , pp. 998
    • Grandjean, N.1    Massies, J.2    Leroux, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.