Wurtzite structure effects on spin splitting in GaN/AlN quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 24, 2005, Pages

  Lo, Ikai ^a   Wang, W T ^a   Gau, M H ^a   Tsay, S F ^a   Chiang, J C ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29644433937     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.245329     Document Type: Article

References (31)

1. J. Nitta, T. Akazaki, H. Takayanagi, and T. Enoki, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.78.1335 78, 1335 (1997).
2. S. Datta and B. Das, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.102730 56, 665 (1990).
3. D. J. Chadi, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.16.790 16, 790 (1977).
4. S. D. Ganichev, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, P. Schneider, S. Giglberger, J. Eroms, J. De Boeck, G. Borghs, W. Wegscheider, D. Weiss, and W. Prettl, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.256601 92, 256601 (2004).
5. Semiconductor Spintronics and Quantum Computation, edited by, D. D. Awschalom,,, D. Loss,, and, N. Samarth, (Springer-Verlag, Berlin, 2002).
6. G. A. Prinz, Phys. Today PHTOAD 0031-9228 10.1063/1.881459 48, 58 (1995);
7. G. A. Prinz, Science SCIEAS 0036-8075 10.1126/science.282.5394.1660 282, 1660 (1998).
8. G. Dresselhaus, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.100.580 100, 580 (1955);
9. E. I. Rashba and V. I. Sheka, Sov. Phys. Solid State SPSSA7 0038-5654 3, 1257 (1961).
10. R. I. Rashba, Sov. Phys. Solid State SPSSA7 0038-5654 2, 1109 (1960);
11. Yu. A. Bychkov and E. I. Rashba, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/17/33/015 17, 6039 (1984).
12. K. Tsubaki, N. Maeda, T. Saitoh, and N. Kobayashi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1474599 80, 3126 (2002).
13. Ikai Lo, J. K. Tsai, W. J. Yao, P. C. Ho, L. W. Tu, T. C. Chang, S. Elhamri, W. C. Mitchel, K. Y. Hsieh, J. H. Huang, H. L. Huang, and W. C. Tsai, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.161306 65, 161306 (R) (2002).
14. V. I. Litvinov, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.155314 68, 155314 (2003).
15. S. L. Chuang and C. S. Chang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.2491 54, 2491 (1996).
16. L. C. LewYan Voon, M. Willatzen, M. Cardona, and N. E. Christensen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.53.10703 53, 10703 (1996), and references therein.
17. G. Dresselhaus, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.105.135 105, 135 (1957);
18. G. Dresselhaus, J. Phys. Chem. Solids JPCSAW 0022-3697 10.1016/0022-3697(56)90004-X 1, 14 (1956).
19. H. Harima, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/14/38/201 14, R967 (2002).
20. A. Kobayashi, O. F. Sankey, S. M. Volz, and J. D. Dow, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.28.935 28, 935 (1983).
21. J. M. Wagner and F. Bechstedt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.115202 66, 115202 (2002).
22. J. C. Phillips, Bonds and Bands in Semiconductors (Academic Press, Inc., San Diego, CA, 1973), p. 179.
23. B. Gil, O. Briot, and R. L. Aulombard, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.R17028 52, R17028 (1995).
24. R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.4.1211 4, 1211 (1971).
25. Data in Science and Technology, Semiconductors Group IV Elements and III-V Compounds, edited by, O. Madelung, (Springer-Verlag, Berlin, 1991).
26. Ikai Lo, W. C. Mitchel, and J. -P. Cheng, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.50.5316 50, 5316 (1994);
27. J. C. Chiang, S. F. Tsay, Z. M. Chau, and Ikai Lo, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.2053 77, 2053 (1996).
28. J. Simon, R. Langer, A. Barski, and N. T. Pelekanos, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.7211 61, 7211 (2000).
29. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1600519 94, 3675 (2003).
30. L. W. Tu, C. L. Hsiao, T. W. Chi, Ikai Lo, and K. Y. Hsieh, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1558216 82, 1601 (2003).
31. S. J. An, W. I. Park, G.-C. Yi, Y.-J. Kim, H.-B. Kang, and M. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1738180 84, 3612 (2004).