Microstructures of semiconducting silicide layers grown by novel growth techniques

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 57-62

  Tatsuoka, H ^a   Takagi, N ^a   Okaya, S ^a   Sato, Y ^a   Inaba, T ^a   Ohishi, T ^a   Yamamoto, A ^a   Matsuyama, T ^b   Kuwabara, H ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b Pulstec Industrial Co Ltd   (Japan)

Author keywords

Deposition process; Diffusion; Silicides; Structural properties

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTALS; DEPOSITION; DIFFUSION; LAYERED MANUFACTURING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON; SILICA; SUBSTRATES;

DEPOSITION PROCESS; INTERDIFFUSION; SILICIDES; STRUCTURAL PROPERTIES;

MICROSTRUCTURE;

EID: 2942746801     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.061     Document Type: Conference Paper

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