ICP etching of InP and related materials using photoresist as mask

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5280 II, Issue , 2003, Pages 838-843

  Deng, Ligang ^a   Goodyear, Andrew L ^a   Dineen, Mark ^a  

^a OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

Author keywords

Dry etching; Etch rate; Etched profile; HBr; ICP; Photoresist mask; Plasma; Selectivity

Indexed keywords

COSTS; DRY ETCHING; ELECTROSTATICS; INDUCTIVELY COUPLED PLASMA; MASKS; MORPHOLOGY; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPUTTERING; THERMAL CONDUCTIVITY;

ETCH RATES; ETCHED PROFILE; HBR; PHOTORESIST MASKS; SELECTIVITY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 2942687797     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.520922     Document Type: Conference Paper

References (4)

1. Andrew L. Goodyear, Mark Dineen, Ligang Deng, "A Comparison of Producation Plasma Etch Chemistries for InP and Related Materials", CS - MAX, San Jose, CA, 2002, 32-34.
2. D J Thomas, K Powell, M M Bourke, Y P Song, C Fragos, " High Density Plasma Etch Processed for the Manufacture of Optoelectronic Devices based on InP", GaAs Mantech, 2001 172-174.
3. S. M.Sze, " Semiconductor devices Physics and Technology" John Wiley & son, 1985
4. th Edition 1997-1998.