Magnetization chirality due to asymmetrical structure in Ni-Fe annular dots for high-density memory cells

Journal of Applied Physics

Volumn 95, Issue 11 II, 2004, Pages 6714-6716

  Nakatani, Ryoichi ^a   Yoshida, Tetsuo ^a   Endo, Yasushi ^a   Kawamura, Yoshio ^a   Yamamoto, Masahiko ^a   Takenaga, Takashi ^b   Aya, Sunao ^b   Kuroiwa, Takeharu ^b   Beysen, Sadeh ^b   Kobayashi, Hiroshi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; ERROR ANALYSIS; HYSTERESIS; KERR MAGNETOOPTICAL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETIZATION; SCANNING ELECTRON MICROSCOPY; SPUTTERING; TUNNEL JUNCTIONS;

HIGH-DENSITY MAGNETIC MEMORY CELLS; MAGNETIC FORCE MICROSCOPY (MFM); MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETIZATION CHIRALITY;

RANDOM ACCESS STORAGE;

EID: 2942672707     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1667433     Document Type: Conference Paper

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