High-quality carbon-doped β-type FeSi2 films synthesized by ion implantation

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 48-56

  Dong, Chuang ^a   Li, Xiaona ^a   Nie, Dong ^a   Xu, Lei ^b   Zhang, Ze ^c  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b FUDAN UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Ion implantation; Orientation relationship; Semiconductor; Silicide

Indexed keywords

ABSORPTION; BAND STRUCTURE; CARBON; DOPING (ADDITIVES); INTERFACES (MATERIALS); ION IMPLANTATION; IRON COMPOUNDS; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

FILM THICKNESS; ION BEAM SYNTHESIS (IBS); ORIENTATION RELATIONSHIP; SILICIDES;

THIN FILMS;

EID: 2942659712     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.060     Document Type: Conference Paper

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