Doping effects on the valence band of Tl2Mn2O 7 pyrochlores: Relation to magnetoresistance

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4209-4211

  Sanchez Benitez J ^a   De Andres A ^a   Prieto, C ^a   Avila, J ^a,b   Martin Carron L ^a   Martinez J L ^a   Alonso, J A ^a   Martinez Lope M J ^a   Casais, M T ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARRIER CONCENTRATION; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRIC INSULATORS; FERMI LEVEL; MAGNETORESISTANCE; PHOTOIONIZATION;

COLOSSAL MAGNETORESISTIVE (CMR); MAGNETIC TRANSITION TEMPERATURES; PHOTOEMISSION SPECTROSCOPY; VALENCE BANDS;

THALLIUM COMPOUNDS;

EID: 2942653144     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755413     Document Type: Article

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