Enhanced dielectric properties of compositionally modified BST based thin films for voltage tunable microwave devices

Materials Research Society Symposium - Proceedings

Volumn 784, Issue , 2003, Pages 313-318

  Cole, M W ^a   Nothwang, W D ^a   Hubbard, C ^a   Ngo, E ^a   Ervin, M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; DIELECTRIC LOSSES; ELECTRIC POTENTIAL; INTEGRATION; MICROWAVE DEVICES; PERMITTIVITY; SEMICONDUCTOR DOPING; THIN FILMS;

DIELECTRIC TUNABILITY; INTERFACIAL PHASES; THERMAL PROCESSING; TUNABLE DEVICES;

BARIUM COMPOUNDS;

EID: 2942648682     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-784-c5.6     Document Type: Conference Paper

References (6)

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