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Solid State Electronics

Volumn 38, Issue 6, 1995, Pages 1165-1170

Parasitic current characteristics of a MOSFET with a Si-implanted gate-SiO2

(3) Ohzone, T a Michii, A a Hori, T b

a TOYAMA PREFECTURAL UNIVERSITY (Japan)

b PANASONIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2942646398 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(94)00244-A Document Type: Article

Times cited : (4)

References (14)

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- Kalnitsky¹ Boothroyd² Ellul³

2
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- Kalnitsky¹ Boothroyd² Ellul³

3
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- Kalnitsky¹ Boothroyd² Ellul³ Poindexter⁴ Caplan⁵

4
- 0001076504
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5
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6
- 0028519199
- (1994) Solid-St. Electron. , vol.37 , pp. 1771
- Ohzone¹ Hori²

7
- 0028450002
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- Ohzone¹ Hori²

8
- 0015772255
- Chicago
- (1973) 2nd Int. Symp. Silicon Mater. Sci. Technol. , pp. 401-413
- Naber¹ Lockwood²

9
- 0016471125
- The implanted stepped-oxide MNOSFET
- (1975) IEEE Transactions on Electron Devices , vol.22 ED , pp. 62
- Krick¹

10
- 0018005073
- Cross-gate MNOS memory device
- (1978) IEEE Transactions on Electron Devices , vol.25 ED , pp. 1071
- Hsia¹

11
- 0004132814
- 2nd edn., Dowden, Hutchinson & Ross
- (1975) Projected Range Statistics, Semiconductors and Related Materials
- Gibbons¹ Johnson² Mylroie³

12
- 0004005306
- 2nd edn., Wiley, New York
- (1981) Physics of Semiconductor Devices
- Sze¹

13
- 0016972933
- 2nd edn.
- (1976) Proc. IEEE , vol.64 , pp. 1039
- Chang¹

14
- 0023593251
- (1987) IEDM Tech. Dig. , pp. 732-735
- Fuse¹ Ogawa² Tateiwa³ Nakao⁴ Odanaka⁵ Fukumoto⁶ Iwasaki⁷ Ohzone⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.