Analysis of amine contamination on silicon oxide surfaces using ToF-SIMS

Applied Surface Science

Volumn 233, Issue 1-4, 2004, Pages 352-359

  Lu, D ^a   Mo, Z Q ^b   Xing, Z X ^a   Gui, D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b PSB Corporation   (Singapore)

Author keywords

Photoresist poisoning; Silicon oxide; Surface contamination; ToF SIMS

Indexed keywords

AMINES; CHEMICAL VAPOR DEPOSITION; CLEANING; CONTAMINATION; DESORPTION; GAS CHROMATOGRAPHY; MASS SPECTROMETRY; PHOTOLYSIS; PHOTORESISTS; SENSITIVITY ANALYSIS;

PHOTORESIST POISONING; SILICON OXIDE; SURFACE CONTAMINATION; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRY (TOF-SIMS);

SILICON COMPOUNDS;

EID: 2942615326     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.248     Document Type: Article

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