Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si:H MIS photodiodes

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 810-813

  Aguas H ^a   Pereira, L ^a   Ferreira, I ^a   Ramos, A R ^b   Viana, A S ^c   Andreu, J ^d   Vilarinho, P ^e   Fortunato, E ^a   Martins, R ^a  

^a DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

^d UNIVERSITY OF BARCELONA   (Spain)

^e UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; GOLD; INTERFACES (MATERIALS); METAL INSULATOR BOUNDARIES; SILICON COMPOUNDS; THERMAL EFFECTS; THICKNESS MEASUREMENT;

METAL INSULATOR SEMICONDUCTOR (MIS) PHOTODIODES; ROOM TEMPERATURE; SCHOTTKY STRUCTURE;

PHOTODIODES;

EID: 2942588791     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.097     Document Type: Conference Paper

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