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Volumn 84, Issue 19, 2004, Pages 3744-3746

Toward improved and tunable polymer field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC VACUUM; LIGHT EMITTING ELECTROCHEMICAL CELLS (LEC); ROOM TEMPERATURE; THIN FILM FIELD EFFECT TRANSISTORS (TFT);

EID: 2942578198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1737483     Document Type: Article
Times cited : (29)

References (19)
  • 16
    • 2942524002 scopus 로고    scopus 로고
    • Note
    • Note, if the gate electrode is not floating, a dilute screening ionic layer is expected to have formed also in the active material next to the gate oxide. This layer is not included in the inset of Fig. 1.
  • 18
    • 2942523475 scopus 로고    scopus 로고
    • Note
    • bulk is decreasing some-what and consequently that some doping takes place. We attribute this to the Fermi level of Au being significantly closer to the valence band edge than the conduction band edge of superyellow thus allowing for very slight p-type doping below the band gap. However, as observed this effect only seems to be important at long charging times.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.