Importance of ion beam parameters on self-organized pattern formation on semiconductor surfaces by ion beam erosion

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 106-110

  Ziberi, B ^a   Frost, F ^a   Tartz, M ^a   Neumann, H ^a   Rauschenbach, B ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

Ion beam parameter; Pattern; Self organization; Semiconductor

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; EROSION; PARAMETER ESTIMATION; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS; SILICON; SPECTRUM ANALYSIS; SURFACE TOPOGRAPHY; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM PARAMETER; PATTERN; SELF-ORGANIZATION; SEMICONDUCTOR;

ION BEAMS;

EID: 2942568036     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.142     Document Type: Conference Paper

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