Effect of dielectric polarization on the properties of charged point defects in insulating crystals: The nitrogen vacancy in AlN

Journal of Physics Condensed Matter

Volumn 16, Issue 20, 2004, Pages 3371-3378

  Vail, J M ^a   Schindel, D ^a   Yang, A ^a   Penner, O ^a   Pandey, R ^b   Jiang, H ^b,f   Blanco, M A ^c   Costales, A ^c   Qiu, Q C ^d   Xu, Y ^e  

^a UNIVERSITY OF MANITOBA   (Canada)

^b MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^c UNIVERSITY OF OVIEDO   (Spain)

^d SHANTOU UNIVERSITY   (China)

^e LANZHOU UNIVERSITY   (China)

^f University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BOUNDARY CONDITIONS; CRYSTALS; DIELECTRIC MATERIALS; DIFFUSION; GROUND STATE; NITROGEN; POLARIZATION; QUANTUM THEORY;

CRYSTAL INSULATORS; DIELECTRIC POLARIZATION; INSULATING CRYSTALS; OPTICAL EXCITATION ENERGY;

POINT DEFECTS;

EID: 2942557329     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/20/008     Document Type: Article

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