Preferred orientation control and characterization of AlN thin films using reactive sputtering

Tamkang Journal of Science and Engineering

Volumn 7, Issue 1, 2004, Pages 1-4

  Ho, Chao Jen ^a   Shing, Tai Kang ^a   Li, Pin Chou ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

AlN; Characterization; Reactive Sputtering; Texture

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; CRYSTALS; ION BEAMS; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SPUTTERING; TEXTURES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

REACTIVE SPUTTERING; SUBSTRATE TEMPERATURES; SURFACE ACOUSTIC WAVES;

ALUMINUM NITRIDE;

EID: 2942538903     PISSN: 15606686     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. Harries, G. B., "Quantitative Measurements of Preferred Orientation in Rolled Uranium Bars," The Philosophical Magazine, Vol. 43, pp. 113-123 (1952).
2. Verardi, P. et al., Proceedings of the Ultrasonics Symposium, Vol. 1, IEEE, NJ, U.S.A., p. 569 (1997).
3. Cho, J. W. et al., "Measurement of the Effective Piezoelectric Constant of Nitride Thin Films and Heterostructures Using Scanning Force Microscopy," MRS Proceedings, Vol. 693 (2001).
4. Nalwa, H. S., "Ferroelectric and Dielectric Thin Films," Academic Press, MA, U.S.A., p. 300 (2002).