High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurements

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 802-805

  Sugawara, Takuya ^a   Futako, Wataru ^a   Kamiya, Toshio ^a   Shimizu, Isamu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ENERGY GAP; GAIN MEASUREMENT; LEAKAGE CURRENTS; PHOTOCURRENTS; SILICON COMPOUNDS; TRANSIENTS;

PHOTOEXCITED CARRIERS; PHOTORESPONSES; THERMAL EXCITATION; TRANSIENT CURRENT METHOD;

PHOTODIODES;

EID: 2942536135     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.03.095     Document Type: Conference Paper

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