Photoconductivity of a-Si:H and a-Ge:H: Influence of potential fluctuations

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 314-317

  Shimakawa, K ^a   Ando, K ^a   Aoki, T ^b  

^a GIFU UNIVERSITY   (Japan)

^b TOKYO POLYTECHNIC UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; DIELECTRIC RELAXATION; GERMANIUM; PHOTOCONDUCTIVITY; SAMPLING; THERMOELECTRIC POWER PLANTS;

BAND EDGES; CHARGE TRANSPORT; COMPENSATED FILMS; POTENTIAL FLUCTUATIONS;

SILICON;

EID: 2942534306     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.093     Document Type: Conference Paper

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