Challenges in using the latest generation of IGBTs in traction converters

EPE Journal (European Power Electronics and Drives Journal)

Volumn 15, Issue 4, 2005, Pages 13-18

  Bakran, Mark M ^a,b,c   Eckel, Hans Günter ^a,b   Helsper, Martin ^a,b   Nagel, Andreas ^a,b  

^a SIEMENS AG   (Germany)

^b Siemens Automation and Drives   (Germany)

^c R and D Traction Converter Development   (Germany)

Author keywords

Device applications; IGBT; Traction

Indexed keywords

DIODES; ELECTRIC CONVERTERS; ELECTRIC POTENTIAL; NETWORKS (CIRCUITS); SEMICONDUCTOR MATERIALS;

DEVICE APPLICATIONS; TRACTION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 29344433416     PISSN: 09398368     EISSN: 23769319     Source Type: Journal    
DOI: 10.1080/09398368.2005.11463599     Document Type: Article

References (5)

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3. T. Laska, M. Münzer, F. Pfirsch, C. Schaeffer, T. Schmidt: The Field Stop IGBT (FS IGBT) A New Power Device Concept with a Great Improvement Potential; ISPSD 2000, Toulouse, France pp. 355-358
4. S. Gediga, R. Marquardt, R. Sommer: High Power IGBT Converter with new Gate Drive and Protection Circuit; EPE 1995, Sevilla, Spain, pp. 1066-1070.
5. M. M. Bakran, H.-G. Eckel: Einsatz von IGBTs in Traktionsumrichtern; ETG-Fachtagung Bauelemente der Leistungselektronik 2002, S. 163-172