Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

IEEE Transactions on Electron Devices

Volumn 52, Issue 12, 2005, Pages 2744-2752

  Rieh, Jae Sung ^a   Greenberg, David ^b   Liu, Qizhi ^c   Joseph, Alvin J ^c   Freeman, Greg ^c   Ahlgren, David C ^c  

^a Korea University   (South Korea)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Electrothermal effects; Heterojunction bipolar transistors

Indexed keywords

ELECTRIC PROPERTIES; OPTIMIZATION; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC PROPERTIES;

DEVICE DESIGN; ELECTRICAL PERFORMANCES; ELECTROTHERMAL EFFECTS; OPERATION SPEED ENHANCEMENT; THERMAL PERFORMANCES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 29244487927     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.859652     Document Type: Article

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